Physics > Semi-conductor Devices and Electronics > 11.0 Transistor
Semi-conductor Devices and Electronics
1.0 Introduction
1.1 Classification of solids on the basis of their conductivity
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
2.0 Types of semiconductor
3.0 Mass action law
4.0 Electrical conductivity in semiconductor
5.0 $p-n$ junction
5.1 Depletion region
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
6.0 Breakdown voltage
7.0 $I-V$ characteristics of a $p-n$ junction
8.0 Rectifier
8.1 Half wave rectifier
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
9.0 Light emitting diode (LED)
10.0 Zener diode
11.0 Transistor
12.0 Boolean identities
13.0 Logic gates
14.0 De Morgan's theorem
11.2 Action of a transistor
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
A transistor has two junctions i.e. emitter junction and a collector junction. There are four possible ways of biasing these two junctions as shown in the table.
| S. No. | Condition | Emitter junction | Collector junction | Region of operation |
| 1 | FR | Forward biased | Reverse biased | Active |
| 2 | FF | Forward biased | Forward biased | Saturation |
| 3 | RR | Reverse biased | Reverse biased | Cut-off |
| 4 | RF | Reverse biased | Forward biased | Inverted |
