Physics > Semi-conductor Devices and Electronics > 6.0 Breakdown voltage
Semi-conductor Devices and Electronics
1.0 Introduction
1.1 Classification of solids on the basis of their conductivity
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
2.0 Types of semiconductor
3.0 Mass action law
4.0 Electrical conductivity in semiconductor
5.0 $p-n$ junction
5.1 Depletion region
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
6.0 Breakdown voltage
7.0 $I-V$ characteristics of a $p-n$ junction
8.0 Rectifier
8.1 Half wave rectifier
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
9.0 Light emitting diode (LED)
10.0 Zener diode
11.0 Transistor
12.0 Boolean identities
13.0 Logic gates
14.0 De Morgan's theorem
6.1 Zener breakdown
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
Zener breakdown is a type of electrical breakdown in a reverse biased $p-n$ junction, when the electric field enables tunneling of electrons from the valence band to the conduction band of a semiconductor leading to a large number of free minority carriers which suddenly increase the reverse current.
In general, breakdown occurring below 5 $V$ are caused by Zener effect.
