Physics > Semi-conductor Devices and Electronics > 8.0 Rectifier
Semi-conductor Devices and Electronics
1.0 Introduction
1.1 Classification of solids on the basis of their conductivity
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
2.0 Types of semiconductor
3.0 Mass action law
4.0 Electrical conductivity in semiconductor
5.0 $p-n$ junction
5.1 Depletion region
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
6.0 Breakdown voltage
7.0 $I-V$ characteristics of a $p-n$ junction
8.0 Rectifier
8.1 Half wave rectifier
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
9.0 Light emitting diode (LED)
10.0 Zener diode
11.0 Transistor
12.0 Boolean identities
13.0 Logic gates
14.0 De Morgan's theorem
8.4 Ripple factor
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
The ripple factor is a measure of purity of the DC output of a rectifier. It is defined as,
$$\begin{equation} \begin{aligned}
r = \frac{{{\text{ rms value of the component of wave}}}}{{{\text{Average or DC value}}}} \\
r = \sqrt {{{\left( {\frac{{{I_{rms}}}}{{{I_{DC}}}}} \right)}^2} - 1} \\\end{aligned} \end{equation} $$
- For half wave rectifier, $$\begin{equation} \begin{aligned}
{I_{rms}} = \frac{{{I_m}}}{2},\;{I_{DC}} = \frac{{{I_m}}}{\pi } \\
r = \sqrt {{{\left( {\frac{{\frac{{{I_m}}}{2}}}{{\frac{{{I_m}}}{\pi }}}} \right)}^2} - 1} \\
r = 1.21 \\\end{aligned} \end{equation} $$
- For full wave rectifier, $$\begin{equation} \begin{aligned} {I_{rms}} = \frac{{{I_m}}}{{\sqrt 2 }},\;{I_{DC}} = \frac{{2{I_m}}}{\pi } \\ r = \sqrt {{{\left( {\frac{{\frac{{{I_m}}}{{\sqrt 2 }}}}{{\frac{{2{I_m}}}{\pi }}}} \right)}^2} - 1} \\ r = 0.482 \\\end{aligned} \end{equation} $$