Semi-conductor Devices and Electronics
1.0 Introduction
1.1 Classification of solids on the basis of their conductivity
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
2.0 Types of semiconductor
3.0 Mass action law
4.0 Electrical conductivity in semiconductor
5.0 $p-n$ junction
5.1 Depletion region
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
6.0 Breakdown voltage
7.0 $I-V$ characteristics of a $p-n$ junction
8.0 Rectifier
8.1 Half wave rectifier
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
9.0 Light emitting diode (LED)
10.0 Zener diode
11.0 Transistor
12.0 Boolean identities
13.0 Logic gates
14.0 De Morgan's theorem
1.3 Classification of solids on the basis of band theory
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
A. Metals
In metals either the conduction band is partially filled or conduction band & valence band partially overlap each other.
In metals, there is no forbidden energy gap between the valence and conduction bands.
B. Insulators
In insulators, the valence band is completely filled and conduction band is completely empty.
In insulators, there is a very wide forbidden energy gap between the valence and conduction bands.
In insulators, the forbidden energy gap is more than $3\ eV$.
C. Semiconductors
In semiconductors, the valence band is completely filled and conduction band is empty.
In semiconductors, the forbidden energy gap between the valence and the conduction band is small.
The forbidden energy gap is less than $3\ eV$.
For silicon, the forbidden energy gap is $1.1\ eV$ and for germanium, it is $0.72\ eV$.
At absolute zero, semiconductors behave as a perfect insulator.