Semi-conductor Devices and Electronics
1.0 Introduction
1.1 Classification of solids on the basis of their conductivity
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
2.0 Types of semiconductor
3.0 Mass action law
4.0 Electrical conductivity in semiconductor
5.0 $p-n$ junction
5.1 Depletion region
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
6.0 Breakdown voltage
7.0 $I-V$ characteristics of a $p-n$ junction
8.0 Rectifier
8.1 Half wave rectifier
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
9.0 Light emitting diode (LED)
10.0 Zener diode
11.0 Transistor
12.0 Boolean identities
13.0 Logic gates
14.0 De Morgan's theorem
2.1 Intrinsic semiconductor
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
A pure semiconductor which is free from every impurity is known as an intrinsic semiconductor.
Germanium $(Ge)$ and silicon $(Si)$ are the examples of an intrinsic semiconductor.
In intrinsic semiconductor, ${n_e} = {n_h} = {n_i}$
where,
$n_e$: Density of electron in conduction band
$n_h$: Density of holes in valence band
$n_i$: Intrinsic carrier concentration
When an electric field is applied across an intrinsic semiconductor, electrons and holes move in opposite directions, so that total current $(I)$ through the pure conductor is given by,
$$I = {I_e} + {I_h}$$
where,
$I_e$: Free electron current
$I_h$: Hole current
2.1.1 Hole
It is a seat of positive charge which is produced when an electron breaks away from a covalent bond in a semiconductor.
A hole has a positive charge equal to that of an electron.
The mobility of hole is smaller than that of an electron.
2.1.2 Intrinsic concentration
The intrinsic concentration $\left( {{n_i}} \right)$ varies with temperature $(T)$ as,
$$n_i^2 = {A_0}{T^3}{e^{ - \frac{{{E_g}}}{{kT}}}}$$
where,
$E_g$: Energy gap at $0\ K$ in electron volt $(eV)$
$k = 8.62 \times {10^{ - 5}}\;eV{K^{ - 1}}$: Boltzmann constant
$A_0$: Constant independent of temperature $(T)$
2.1.3 Effect of temperature on conductivity of intrinsic semiconductor
An intrinsic semiconductor will behave as a perfect insulator at absolute zero.
With increasing temperature, the density of hole-electron pairs increases and hence the conductivity of an intrinsic semiconductor increases with increase in temperature.
Similarly, the resistivity decreases as the temperature increases.
The semiconductors have a negative temperature coefficient of resistance.