Physics > Semi-conductor Devices and Electronics > 7.0 $I-V$ characteristics of a $p-n$ junction
Semi-conductor Devices and Electronics
1.0 Introduction
1.1 Classification of solids on the basis of their conductivity
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
2.0 Types of semiconductor
3.0 Mass action law
4.0 Electrical conductivity in semiconductor
5.0 $p-n$ junction
5.1 Depletion region
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
6.0 Breakdown voltage
7.0 $I-V$ characteristics of a $p-n$ junction
8.0 Rectifier
8.1 Half wave rectifier
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
9.0 Light emitting diode (LED)
10.0 Zener diode
11.0 Transistor
12.0 Boolean identities
13.0 Logic gates
14.0 De Morgan's theorem
7.3 Ideal diode
1.2 Band theory of solids
1.3 Classification of solids on the basis of band theory
5.2 Forward biasing of a $p-n$ junction
5.3 Reverse biasing of a $p-n$ junction
8.2 Full wave rectifier
8.3 Ripple frequency
8.4 Ripple factor
8.5 Ripple efficiency $\left( \eta \right)$
8.6 Form factor
A diode permits only unidirectional conduction.
It conducts well in the forward direction and poorly in the reverse direction.
It would have been ideal if a diode acts as a perfect conductor with zero potential difference across its ends when it is forward biased and as a perfect insulator with no flow of current through it when it is reverse biased.
The $I-V$ characteristics of an ideal diode is as shown in the figure.
Note:
- An ideal diode acts like an automatic switch.
- In forward biased, it acts as a closed switch
- In reverse biased, it acts as an open switch
